Diode device based on laser processing and manufacturing method thereof

• Main Authors: WEN GUOHAO, HUANG ZHENGXIN, CHU HONGSHEN, SONG XUGUAN, DENG YUEZHONG
• Format: Patent
• Language: Chinese; English
• Published: 05.04.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a diode device based on laser processing and a manufacturing method thereof. The diode device comprises a first substrate block, a second substrate block, a chip and a protective layer, wherein the second substrate block is located in the same horizontal plane as the first substrate block, and is spaced apart from the first substrate block; the chip is disposed on the firstsubstrate block, and has a bottom surface attached to the top surface of the first substrate block; one end of a wire is connected to the top surface of the chip; the other end of the wire is connected to the top surface of the second substrate block; the protective layer completely wraps the chip and the wire and partially wraps the first substrate block and the second substrate block. The diodedevice can reduce a product error, generates no waste water, and can stop mold pressing glue from permeating a back electrode, and even can improve the loss on a cutting blade. 本发明公开了种基于激光加工的二极管器件及其制造方法，第基板块、第二基板块、芯片和保护层，所述第二