High surge transient voltage suppressor

• Main Author: MALLIKARJUNASWAMY SHEKAR
• Format: Patent
• Language: Chinese; English
• Published: 05.04.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to a high surge transient voltage suppressor. A bidirectional transient voltage suppressor is constructed as an NPN bipolar transistor incorporating optimized collector-base junction realizing avalanche mode breakdown. In some embodiments, the bidirectional transient voltage suppressor is constructed as an NPN bipolar transistor incorporating individually optimized collector-base and emitter-base junctions with the optimized junctions being spatially distributed. The optimized collector-base and emitter-base junctions both realize avalanche mode breakdown to improve the breakdown voltage of the transistor. Alternately, a unidirectional transient voltage suppressor is constructed as an NPN bipolar transistor with a PN junction diode connected in parallel in the reversebias direction to the protected node and incorporating individually optimized collector-base junction of the bipolar transistor and p-n junction of the diode. 本发明涉及高浪涌瞬变电压抑制器。其中，种双向瞬态电压抑制器配置成个NPN双极晶体管，引入优化的集电极-基极结，实现了雪崩模式击穿。