FOOTING REMOVAL IN CUT-METAL PROCESS

• Main Authors: HUANG MINGI, CHUANG YING-LIANG, HUANG KUO-BIN, YEH MING-HSI
• Format: Patent
• Language: Chinese; English
• Published: 05.04.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method includes forming a gate stack, which includes a first portion over a portion of a first semiconductor fin, a second portion over a portion of a second semiconductor fin, and a third portion connecting the first portion to the second portion. An anisotropic etching is performed on the third portion of the gate stack to form an opening between the first portion and the second portion. A footing portion of the third portion remains after the anisotropic etching. The method further includes performing an isotropic etching to remove a metal gate portion of the footing portion, and fillingthe opening with a dielectric material. Embodiments in the invention also relate to footing removal in a cut-metal process. 方法包括形成栅极堆叠件，栅极堆叠件包括：位于第半导体鳍的部分上方的第部分，位于第二半导体鳍的部分上方的第二部分，以及将第部分连接至第二部分的第三部分。对栅极堆叠件的第三部分实施各向异性蚀刻以在第部分和第二部分之间形成开口。在各向异性蚀刻之后，第三部分的基脚部分保留。该方法还包括实施各向同性蚀刻以去除基脚部分的金属栅极部分，以及用介电材料填充开口。本发明的实施例还涉及切割金属工艺中的基脚去除。