Over-current protection circuit of insulated gate bipolar transistor

• Main Authors: YIN JIANGHONG, SUN SONG
• Format: Patent
• Language: Chinese; English
• Published: 29.03.2019
• Subjects: BASIC ELECTRONIC CIRCUITRY; ELECTRICITY; PULSE TECHNIQUE

An embodiment of the invention discloses an over-current protection circuit of an insulated gate bipolar transistor. According to the protection circuit, the input end of an over-current comparison unit is connected with the output end of the insulated gate bipolar transistor; the output end of the over-current comparison unit is connected with the first input end of a first driving unit through an isolation unit; the output end of the first driving unit is connected with the gate of the insulated gate bipolar transistor through a second driving unit; the over-current comparison unit is used for acquiring a current value of the output end of the insulated gate bipolar transistor, and generating an output comparison signal when it is judged that an over-current phenomenon occurs according to the current value; and the isolation unit outputs a preset voltage signal to the first driving unit according to the output comparison signal so as to trigger the first driving unit to generate a driving signal used for dr