APPARATUS FOR HANDLING SEMICONDUCTOR WAFER IN EPITAXY REACTOR AND METHOD FOR PRODUCING SEMICONDUCTOR WAFER HAVING EPITAXIAL LAYER

• Main Authors: MOOS PATRICK, HECHT HANNES
• Format: Patent
• Language: Chinese; English
• Published: 15.03.2019
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

Disclosed are an apparatus for handling a semiconductor wafer in an epitaxy reactor and a method for producing a semiconductor wafer having an epitaxial layer. The apparatus comprises a susceptor; elongated holes passing through the susceptor; a wafer lifting shaft; wafer lifting pins led through the elongated holes; a susceptor carrying shaft; susceptor carrying arms; susceptor supporting pins; guide sleeves anchored in the susceptor carrying arms; and guide elements which project from the guide sleeves and have at upper ends drilled holes in which the wafer lifting pins are inserted, and which can be lifted and lowered by means of the wafer lifting shaft together with the wafer lifting pins. 在外延反应器中处理半导体晶片的设备和制备具有外延层的半导体晶片的方法。所述设备包括：基座；引导穿过基座的纵向洞；晶片提升轴；引导穿过纵向洞的晶片提升销；基座承载轴；基座承载臂；基座支承销；被锚定在基座承载臂中的引导袖；及引导元件，其突出于引导袖并且在上端具有有晶片提升销插入其中的孔，并且能够借助晶片提升轴连同晶片提升销起升高和降低。