APPARATUS AND METHOD FOR HEATING OR COOLING A WAFER

• Main Authors: FARLEY MARVIN, AMEEN MIKE, JEN CAUSON KOAUN
• Format: Patent
• Language: Chinese; English
• Published: 01.03.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

An ion implantation system has a first chamber and a process chamber with a heated chuck. A controller' transfers the workpiece between the heated chuck and first chamber and selectively energizes theheated chuck first and second modes, in the first and second modes, the heated chuck is heated to a first and second temperature; respectively. The first temperature is predetermined, The second temperature is variable, whereby the -controller determines the second temperature based on a thermal budget, an implant energy, and/or an initial temperature of the workpiece in the first chamber and maintains the second temperature in. the second mode. Transferring the workpiece from the heated chuck to the first chamber removes implant energy from the process chamber in the second mode, Heat may befurther transferred from the heated chuck to a cooling platen by a transfer of the workpiece therebetween to sequentially coo! the heated chuck. 本发明涉及种离子注入系统，其包括第腔室以及具有加热夹盘的处理腔室。控制器在加热夹盘与第腔室之间转移工件并选择性激励加热夹盘的第模式和第二模式。在第模式和第二模式