Substrate precursor for terahertz wave detector, and preparation method thereof
The invention belongs to the technical field of detectors, and in particular relates to a substrate precursor for a terahertz wave detector, and a preparation method thereof. An AlGaN/GaN high electron mobility field-effect transistor (HEMT) is used as a basic structure; by means of substrate design...
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Main Authors | , , , |
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Format | Patent |
Language | Chinese English |
Published |
01.03.2019
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Subjects | |
Online Access | Get full text |
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