Substrate precursor for terahertz wave detector, and preparation method thereof

The invention belongs to the technical field of detectors, and in particular relates to a substrate precursor for a terahertz wave detector, and a preparation method thereof. An AlGaN/GaN high electron mobility field-effect transistor (HEMT) is used as a basic structure; by means of substrate design...

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Bibliographic Details
Main Authors LUO HENG, TIAN XUENONG, SUN YUNFEI, BAN JIANMIN
Format Patent
LanguageChinese
English
Published 01.03.2019
Subjects
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