Substrate precursor for terahertz wave detector, and preparation method thereof

• Main Authors: LUO HENG, TIAN XUENONG, SUN YUNFEI, BAN JIANMIN
• Format: Patent
• Language: Chinese; English
• Published: 01.03.2019
• Subjects: BASIC ELECTRIC ELEMENTS; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

The invention belongs to the technical field of detectors, and in particular relates to a substrate precursor for a terahertz wave detector, and a preparation method thereof. An AlGaN/GaN high electron mobility field-effect transistor (HEMT) is used as a basic structure; by means of substrate design, an AlGaN/GaN layer is prepared by utilization of an epitaxial method; then, an active area table surface, a grid medium, an ohmic contact window and an electrode are prepared; the obtained two-dimensional electron gas in the field-effect transistor has relatively high electron concentration and migration rate; a spectrum detection device realizing high-speed, high-sensitivity and high-SNR detection of THz wave in the room temperature condition is obtained; and thus, detection of terahertz waveis finally realized. 本发明属于探测器技术领域，具体涉及种太赫兹波探测器用衬底前驱体及其制备方法。以铝镓氮/镓氮高电子迁移率场效应晶体管（HEMT）为基本结构，通过衬底设计、利用外延法制备铝镓氮/镓氮层；然后制备有源区台面、栅介质、欧姆接触窗口、电极，得到的场效应晶体管中的二维电子气具有较高的电子浓度和迁移率，得到在室温条件下对THz波实现高速、高灵敏度、高信噪比探测的波谱探测装置，最终实现对太赫兹波的探测。