Semiconductor structure and forming method thereof

• Main Authors: YUAN KEFANG, ZHOU JUNQING, WANG ZI
• Format: Patent
• Language: Chinese; English
• Published: 01.03.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a semiconductor structure and a forming method thereof. The forming method comprises the following steps of providing a substrate; forming a first dielectric structure, and a first groove which penetrates through the first dielectric structure on the substrate; filing the first groove with a first interconnection layer; performing back etching on the first interconnection layer to form a second groove in the first dielectric structure, wherein the first interconnection layer is located at the bottom of the second groove; and filling the second groove with a second interconnection layer. According to the forming method, in the subsequent third groove forming process, oxidation of the first interconnection layer is avoided, the contact resistance between the first interconnection layer and a third interconnection layer is ensured, and therefore the electrical performance of the semiconductor structure is improved. 本发明提供种半导体结构及其形成方法，其中，形成方法包括：提供基底；在所述基底上形成第介质结构、以及贯穿所述第介质结构的第凹槽；在所述第凹槽内填充第互连