Method for coupling silicon-based optoelectronic chip and single-mode optical fiber
The invention relates to the technical field of optical communication devices, and specifically relates to a method for coupling a silicon-based optoelectronic chip and a single-mode optical fiber. Asilicon dioxide layer is deposited and grown on a silicon substrate, and silicon waveguide is dispose...
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Main Authors | , |
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Format | Patent |
Language | Chinese English |
Published |
01.03.2019
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Subjects | |
Online Access | Get full text |
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Summary: | The invention relates to the technical field of optical communication devices, and specifically relates to a method for coupling a silicon-based optoelectronic chip and a single-mode optical fiber. Asilicon dioxide layer is deposited and grown on a silicon substrate, and silicon waveguide is disposed in the silicon dioxide layer. An end face of the single-mode optical fiber is arranged in a convex curved shape. A gap is between the single-mode optical fiber and the silicon dioxide layer. At least one section of low refractive index waveguide is disposed between the single-mode optical fiber and the silicon waveguide. The low refractive index waveguide has a sheet-shaped rectangular parallelepiped shape and both ends have sharp corners. An incident end of the silicon waveguide is a sharp corner. A fiber core outgoing end of the single-mode optical fiber is aligned with the incident end of the low refractive index waveguide. The low refractive index waveguide partially overlaps the silicon waveguide in a horizo |
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Bibliography: | Application Number: CN201811361876 |