ESD device with fast response and high transient current

• Main Authors: APPASWAMY ARAVIND C, DI SARRO JAMES P
• Format: Patent
• Language: Chinese; English
• Published: 26.02.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

An electrostatic discharge (ESD) device (e.g. 300) with fast response to high transient currents. The ESD device includes a short-pulse discharge (SPD) path and a long-pulse discharge (LPD) path. TheSPD path provides robust response to ESD events, and it triggers a self-bias configuration of the LPD path. Advantageously, the SPD path reduces the risk of ESD voltage overshoot by promptly discharging short-pulse currents, such as a charge device model (CDM) current, whereas the LPD path provides efficient discharge of long-pulse currents, such as a human body model (HBM) current. In one implementation, for example, the SPD path includes a MOS transistor (e.g. 322), and the LPD includes a bipolar transistor (e.g. 324) having a base (e.g. 342) coupled to the source (e.g. 344) of the MOS transistor. 本申请公开具有对高瞬态电流快速响应的静电放电(ESD)器件(例如，300)。ESD器件包括短脉冲放电(SPD)路径和长脉冲放电(LPD)路径。SPD路径提供对ESD事件的鲁棒响应，并且SPD路径触发LPD路径的自偏置配置。有利地，SPD路径通过使短脉冲电流(诸如充电器件模型(CDM)电流)迅速放电来减少ESD电压过冲的风险，而LPD路径提供长脉冲电流(诸如人体模型(HBM)电流)的有效放电。在个实施方式中，例如，SPD路径包括MOS