High-precision current reference circuit

The invention provides a high-precision current reference circuit. The circuit comprises multiple MOS transistors, a polycrystalline silicon resistor R1, a polycrystalline silicon resistor R0, a PNP triode Q1, a PNP triode Q2 and the like, wherein the Q2 and the R0 are connected in parallel, the Q1...

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Bibliographic Details
Main Authors WANG XUAN, HUANG SHENGMING, ZHANG GUOHUI, ZHANG XUETAO, LI SUWEN, DUAN QUANZHEN
Format Patent
LanguageChinese
English
Published 15.02.2019
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Summary:The invention provides a high-precision current reference circuit. The circuit comprises multiple MOS transistors, a polycrystalline silicon resistor R1, a polycrystalline silicon resistor R0, a PNP triode Q1, a PNP triode Q2 and the like, wherein the Q2 and the R0 are connected in parallel, the Q1 and the R1 are connected in parallel, the mode that the triodes and the polycrystalline silicon resistors are connected in parallel is the core architecture of the circuit, NM2 and NM3 form a current mirror, NM0 and NM1 form a current mirror, and bias current of the current mirrors comes from superimposed current of the triodes and the polycrystalline silicon resistors; finally, positive temperature coefficient current obtained through output of a current mirror formed by PM7 and PM8 and negative temperature coefficient current obtained through output of a current mirror formed by PM4 and PM5 are mutually overlaid, and reference current Iref irrelevant to the temperature is obtained. Accordingly, relative to a gene
Bibliography:Application Number: CN201811408654