Short channel trench power MOSFET

• Main Authors: MINAMISAWA RENATO, KNOLL LARS
• Format: Patent
• Language: Chinese; English
• Published: 05.02.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

It is an object of the invention to provide a power semiconductor device having a low on-state resistance while avoiding any short channel effects and having a low subthreshold slope. To attain this object the invention provides a trench power semiconductor device, which comprises a compensation layer (15) of a first conductivity type, wherein the compensation layer (15) is extending on a gate insulation layer (11) between a source layer (5) of the first conductivity type and a substrate layer (9) of the first conductivity type directly adjacent to a channel region of a second conductivity type, and wherein an inequation is illustrated. In the above inequation, Lch is a channel length, [epsilon]CR is a permittivity of the channel region, [epsilon]GI is a permittivity of the gate insulationlayer, tC0MP is a thickness of the compensation layer (15) and tGI is a thickness of the gate insulation layer (11). 本发明的个目的是提供种功率半导体装置，其具有低接通状态电阻，同时避免任何短沟道效应并且具有低阈值下斜率。为了达到这个目的，本发明提供种沟槽功率半导体装置，其包括第导电类型的补偿层(15)，其中补偿层(15)与第二导