Vertical-type memory device and manufacturing method thereof

• Main Authors: HYUN GOO JUN, JONG WON KIM
• Format: Patent
• Language: Chinese; English
• Published: 05.02.2019
• Subjects: ELECTRICITY

The present invention provides a vertical-type memory device and a manufacturing method thereof, the device including a substrate having a cell array region and a connection region; gate electrode layers stacked on the cell array region and the connection region of the substrate, the gate electrode...