Vertical-type memory device and manufacturing method thereof
The present invention provides a vertical-type memory device and a manufacturing method thereof, the device including a substrate having a cell array region and a connection region; gate electrode layers stacked on the cell array region and the connection region of the substrate, the gate electrode...
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Main Authors | , |
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Format | Patent |
Language | Chinese English |
Published |
05.02.2019
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Subjects | |
Online Access | Get full text |
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