Vertical-type memory device and manufacturing method thereof

• Main Authors: HYUN GOO JUN, JONG WON KIM
• Format: Patent
• Language: Chinese; English
• Published: 05.02.2019
• Subjects: ELECTRICITY

The present invention provides a vertical-type memory device and a manufacturing method thereof, the device including a substrate having a cell array region and a connection region; gate electrode layers stacked on the cell array region and the connection region of the substrate, the gate electrode layers forming a stepped structure in the connection region; a cell channel layer in the cell arrayregion, the cell channel layer passing through the plurality of gate electrode layers; a dummy channel layer in the connection region, the dummy channel layer passing through at least one gate electrode layer of the plurality of gate electrode layers; a cell epitaxial layer disposed below the cell channel layer; and a dummy epitaxial layer disposed below the dummy channel layer, wherein the dummyepitaxial layer has a shape that is different from a shape of the cell epitaxial layer. 提供了种垂直型存储器装置及其制造方法，所述装置包括：衬底，具有单元阵列区域和连接区域；栅电极层，堆叠在衬底的单元阵列区域和连接区域上，栅电极层在连接区域中形成阶梯结构；单元通道层，在单元阵列区域中，单元通道层穿过所述多个栅电极层；虚设通道层，在连接区域中，虚设通道层穿过所述多