Vertical-type memory device and manufacturing method thereof
The present invention provides a vertical-type memory device and a manufacturing method thereof, the device including a substrate having a cell array region and a connection region; gate electrode layers stacked on the cell array region and the connection region of the substrate, the gate electrode...
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Format | Patent |
Language | Chinese English |
Published |
05.02.2019
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Abstract | The present invention provides a vertical-type memory device and a manufacturing method thereof, the device including a substrate having a cell array region and a connection region; gate electrode layers stacked on the cell array region and the connection region of the substrate, the gate electrode layers forming a stepped structure in the connection region; a cell channel layer in the cell arrayregion, the cell channel layer passing through the plurality of gate electrode layers; a dummy channel layer in the connection region, the dummy channel layer passing through at least one gate electrode layer of the plurality of gate electrode layers; a cell epitaxial layer disposed below the cell channel layer; and a dummy epitaxial layer disposed below the dummy channel layer, wherein the dummyepitaxial layer has a shape that is different from a shape of the cell epitaxial layer.
提供了种垂直型存储器装置及其制造方法,所述装置包括:衬底,具有单元阵列区域和连接区域;栅电极层,堆叠在衬底的单元阵列区域和连接区域上,栅电极层在连接区域中形成阶梯结构;单元通道层,在单元阵列区域中,单元通道层穿过所述多个栅电极层;虚设通道层,在连接区域中,虚设通道层穿过所述多 |
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AbstractList | The present invention provides a vertical-type memory device and a manufacturing method thereof, the device including a substrate having a cell array region and a connection region; gate electrode layers stacked on the cell array region and the connection region of the substrate, the gate electrode layers forming a stepped structure in the connection region; a cell channel layer in the cell arrayregion, the cell channel layer passing through the plurality of gate electrode layers; a dummy channel layer in the connection region, the dummy channel layer passing through at least one gate electrode layer of the plurality of gate electrode layers; a cell epitaxial layer disposed below the cell channel layer; and a dummy epitaxial layer disposed below the dummy channel layer, wherein the dummyepitaxial layer has a shape that is different from a shape of the cell epitaxial layer.
提供了种垂直型存储器装置及其制造方法,所述装置包括:衬底,具有单元阵列区域和连接区域;栅电极层,堆叠在衬底的单元阵列区域和连接区域上,栅电极层在连接区域中形成阶梯结构;单元通道层,在单元阵列区域中,单元通道层穿过所述多个栅电极层;虚设通道层,在连接区域中,虚设通道层穿过所述多 |
Author | JONG WON KIM HYUN GOO JUN |
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DocumentTitleAlternate | 垂直型存储器装置及其制造方法 |
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Notes | Application Number: CN201810785583 |
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RelatedCompanies | SAMSUNG ELECTRONICS CO., LTD |
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Snippet | The present invention provides a vertical-type memory device and a manufacturing method thereof, the device including a substrate having a cell array region... |
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Title | Vertical-type memory device and manufacturing method thereof |
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