PROCESSING METHOD OF A WAFER

The invention provides a processing method of a wafer, which can inhibit the bias between the grinding rate for processing a first wafer and the grinding rate for continuous processing after idle running. The processing method of the wafer at least comprises an idle running step (ST1) which drives t...

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Bibliographic Details
Main Authors TAKEGAWA MAHIRO, SHIRAHAMA TOMOKO
Format Patent
LanguageChinese
English
Published 01.02.2019
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Summary:The invention provides a processing method of a wafer, which can inhibit the bias between the grinding rate for processing a first wafer and the grinding rate for continuous processing after idle running. The processing method of the wafer at least comprises an idle running step (ST1) which drives the grinding assembly of a grinding device, a grinding step (ST2) which uses a grinding pad to conduct grinding on the wafer maintained by a clamping disc work platform of the grinding device. The grinding condition in the grinding step (ST2) sets an inclining angle of a rotation shaft during the initial processing period when grinding is conducted on the first wafer, and an inclining angle of a rotation shaft during the period when continuous processing is conducted on the second wafer and otherwafers. The inclining angle of the rotating shaft during the initial processing period is set in a manner that the grinding rate of the first wafer with the inclining angle of the rotation shaft during the initial processing
Bibliography:Application Number: CN201810762788