Double-layer PNZST perovskite anti-ferroelectric thin film and preparation method thereof

• Main Authors: SUN NINGNING, HAO XIHONG, LI YONG, DU JINHUA, WANG XUANLI, SHEN BINGZHONG
• Format: Patent
• Language: Chinese; English
• Published: 18.01.2019
• Subjects: BASIC ELECTRIC ELEMENTS; CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The invention discloses a double-layer PNZST perovskite anti-ferroelectric thin film and a preparation method thereof. The anti-ferroelectric thin film comprises a material having a chemical general formula of Pb0.99Nb0.02(Zr0.55Sn0.40Ti0.05)0.98O3 (PNZST for short) The invention designs an appropriate radio frequency magnetron sputtering method for improving the energy storage performance of thethin film. According to the method, the double-layer film is prepared from the same PNZST material by adopting different radio frequency magnetron sputtering processes in situ in sectioned and layeredmanners. Test results show that compared with other single-layer anti-ferroelectric PNZST film, the perovskite PNZST anti-ferroelectric double-layer heterostructure film prepared by the appropriate magnetron sputtering process has high dielectric constant and breakdown field strength, so that high energy storage density and high energy storage efficiency are obtained. The energy storage density value of the double-layer a