SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
The application relates to a semiconductor device and a manufacturing method thereof. An improvement is achieved in the reliability of a semiconductor device. Over an insulating layer, an optical waveguide and a p-type semiconductor portion are formed. Over the p-type semiconductor portion, a multi-...
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Main Authors | , , , |
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Format | Patent |
Language | Chinese English |
Published |
15.01.2019
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Subjects | |
Online Access | Get full text |
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Summary: | The application relates to a semiconductor device and a manufacturing method thereof. An improvement is achieved in the reliability of a semiconductor device. Over an insulating layer, an optical waveguide and a p-type semiconductor portion are formed. Over the p-type semiconductor portion, a multi-layer body including an n-type semiconductor portion and a cap layer is formed. Over a first interlayer insulating film covering the optical waveguide, the p-type semiconductor portion, and the multi-layer body, a heater located over the optical waveguide is formed. In the first interlayer insulating film, first and second contact holes are formed. A first contact portion electrically coupled with the p-type semiconductor portion is formed continuously in the first contact hole and over the first interlayer insulating film. A second contact portion electrically coupled with the cap layer is formed continuously in the second contact hole and over the first interlayer insulating film. A wire formed over a second inte |
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Bibliography: | Application Number: CN20181690111 |