SILICON WAFER FOR AN ELECTRONIC COMPONENT AND METHOD FOR THE PRODUCTION THEREOF

The invention relates to a method for producing a silicon wafer for an electronic component, having the method step of epitaxially growing of a silicon layer on a carrier substrate and removing the silicon layer as a silicon wafer from the carrier substrate, wherein at least one p-dopant and at leas...

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Bibliographic Details
Main Authors REBER STEFAN, SCHILLINGER KAI, SIEBKE FRANK
Format Patent
LanguageChinese
English
Published 21.12.2018
Subjects
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