SILICON WAFER FOR AN ELECTRONIC COMPONENT AND METHOD FOR THE PRODUCTION THEREOF
The invention relates to a method for producing a silicon wafer for an electronic component, having the method step of epitaxially growing of a silicon layer on a carrier substrate and removing the silicon layer as a silicon wafer from the carrier substrate, wherein at least one p-dopant and at leas...
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Main Authors | , , |
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Format | Patent |
Language | Chinese English |
Published |
21.12.2018
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Subjects | |
Online Access | Get full text |
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