SILICON WAFER FOR AN ELECTRONIC COMPONENT AND METHOD FOR THE PRODUCTION THEREOF

• Main Authors: REBER STEFAN, SCHILLINGER KAI, SIEBKE FRANK
• Format: Patent
• Language: Chinese; English
• Published: 21.12.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to a method for producing a silicon wafer for an electronic component, having the method step of epitaxially growing of a silicon layer on a carrier substrate and removing the silicon layer as a silicon wafer from the carrier substrate, wherein at least one p-dopant and at least one n-dopant is introduced into the silicon layer during the epitaxial growth. The invention is characterized in that the introducing of the dopant into the silicon layer occurs such that the silicon layer is formed having an electrically active p-doping and an electrically active n-doping, each greater than 1*1014 cm<-3>. 本发明涉及种用于制造用于电子元件的硅晶圆的方法，该方法具有在载体衬底上外延生长硅层和将硅层从载体衬底上分离以作为硅晶圆的方法步骤，其中，在外延生长期间，向硅层中引入至少种p型掺杂材料和至少种n型掺杂材料。本发明的特征在于，实现向硅层中引入掺杂材料，使得形成具有各自大于1×10cm的电活性p型掺杂和电活性n型掺杂的硅层。