A GaN back-illuminated detector array with high duty cycle and a method for fabricate the same

• Main Authors: LIU KUN, TIAN KUN, MO CAIPING, YE JUNHONG, ZHANG YONGCHUAN, YE SIRONG, HUANG JUNLONG, LUO MUCHANG, SHEN ZHIHUI
• Format: Patent
• Language: Chinese; English
• Published: 21.12.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention belongs to the technical field of manufacturing a detector array, in particular to a high-duty-ratio back-illuminated GaN detector array and a manufacturing method thereof. The manufacturing method comprises sputtering a Ni/Au layer on a GaN epitaxial wafer; growing a SiNx/SiO2 film on the Ni/Au layer by a plasma enhanced chemical vapor precipitation method (PECVD); coating the SiNx/SiO2 film with a photoresist layer; performing exposure development, using contact exposure mode to expose the GaN epitaxial wafer of the detector; etching the SiNx/SiO2 films by electromagnetic coupled plasma ICP method; etching the by electromagnetic coupled plasma ICP method; and using Hydrofluoric acid to remove SiNx/SiO2 film and residual photoresist. The invention has the advantages of low cost, high efficiency, simple manufacturing process and the like, and has outstanding technical advantages in the technical field of manufacturing a back-illuminated GaN detector array. 本发明属于探测器阵列的制作工艺技术领域，具体涉及种高占空比背照式GaN探测器阵