Preparation method of hollow nanosphere array sensor

• Main Authors: CHEN XIN, CHE LEISHENG, SHAO SHAOFENG, HUANG SHENBEI
• Format: Patent
• Language: Chinese; English
• Published: 21.12.2018
• Subjects: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MEASURING; NANOTECHNOLOGY; PERFORMING OPERATIONS; PHYSICS; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; TESTING; TRANSPORTING

The invention provides a preparation method of a hollow nanosphere array sensor. The preparation method comprises the following steps that a, a substrate base material is pre-processed; b, the pre-processed silicon substrate is processed through a photoetching method; c, the silicon substrate is cleaned in normal propyl alcohol and dried by introducing nitrogen gas; d, the dried sample is subjected to detection electrode deposition by selecting Ti as an adhesion layer, selecting AU as a detection electrode and adopting a glow vacuum coating method; e, residual photoresist on the surface of thesample is removed through a stripping technology; f, a sol solution is prepared, and the dried sample substrate is subjected to spin-coating film preparing; and g, the sample is subjected to post thermal evaporation hydrothermal processing and then calcined by introducing nitrogen gas for protection, and the gas sensor integrating a sensing material with a device is prepared. According to the preparation method, the crea