State-based pulse testing method for T-type three-level MOSFET inverter

The invention discloses a state-based pulse testing method for a T-type three-level MOSFET inverter. The voltage and current states of the T-type three-level MOSFET inverter are divided into four types for independent testing, and a load inductor is connected to an output end of the inverter. In the...

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Bibliographic Details
Main Authors XU HAILIANG, SUN PENGXIAO, ZHAO RENDE, REN XUHU, HE JINKUI, YAN QINGZENG, WANG YANSONG, LI GUANGCHEN
Format Patent
LanguageChinese
English
Published 11.12.2018
Subjects
MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
PHYSICS
TESTING
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Summary:The invention discloses a state-based pulse testing method for a T-type three-level MOSFET inverter. The voltage and current states of the T-type three-level MOSFET inverter are divided into four types for independent testing, and a load inductor is connected to an output end of the inverter. In the testing of the first and second types of states, the other end is connected to a negative direct current bus; in the testing of the third and fourth types of states, the other end is connected to a positive direct current bus. In the first type of testing, the switching-on and switching-off characteristics of the first MOSFET of the inverter are tested; in the second type of testing, the switching-on and switching-off characteristics of the second MOSFET of the inverter are tested, and the synchronous rectification state of the fourth MOSFET is tested; in the third type of testing, the switching-on and switching-off characteristics of the third MOSFET of the inverter are tested; in the fourth type of testing, the
Bibliography:Application Number: CN20181940810