Semiconductor device

• Main Authors: KWON TAE-SOON, CHO EDWARD NAM-KYU, LEE JAY JEONG-YUN, LIM BO RA
• Format: Patent
• Language: Chinese; English
• Published: 23.10.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; NANOTECHNOLOGY; PERFORMING OPERATIONS; SEMICONDUCTOR DEVICES; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; TRANSPORTING

The invention discloses a semiconductor device. The semiconductor device includes: a fin-type active region protruding from a substrate and extending in a first direction; at least one nano-sheet spaced apart from an upper surface of the fin-type active region and facing the upper surface of the fin-type active region, the at least one nano-sheet having a channel region; a gate extending on the fin-type active region in a second direction crossing the first direction and surrounding at least a portion of the at least one nano-sheet; a source/drain region on the fin-type active region on both sides of the at least one nano-sheet; and a source/drain protection layer on a sidewall of the at least one nano-sheet and between the source/drain region and the at least one nano-sheet. 公开了种半导体装置。所述半导体装置包括：鳍型有源区，从基底突出并且在第方向上延伸；至少个纳米片，与鳍型有源区的上表面分隔开并且面对鳍型有源区的上表面，所述至少个纳米片具有沟道区；栅极，在鳍型有源区上沿与第方向交叉的第二方向延伸并且围绕所述至少个纳米片的至少部分；源/漏区，在所述至少个纳米片的两侧上位于鳍型有源区上；源极/漏极保护层，位于所述至少个纳米片的侧壁上并且位于源/漏区与所述至少个纳米片之间。