Method for manufacturing NLDMOS device and LDMOS (Laterally Diffused Metal Oxide Semiconductor) power device

• Main Author: LIU XIANZHOU
• Format: Patent
• Language: Chinese; English
• Published: 07.09.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a method for manufacturing a full isolation type NLDMOS device and LDMOS (Laterally Diffused Metal Oxide Semiconductor) power device. The method comprises the steps of performing photoetching on a dielectric layer to remove an unnecessary dielectric layer to form a field effect oxide layer; forming a P type well region and an N type well region; forming an N type drain driftregion and a P type drain drift region; forming a P type isolation structure located below the N type drain drift region and forming a P type isolation structure located below the P type drain driftregion, the doping concentration of the P type isolation structure located below the N type drain drift region being greater than the doping concentration of the P type isolation structure located below the P type drain drift region; and forming a grid structure on the field effect oxide layer. According to the method provided by the invention, the manufacturing process of a semiconductor device having a surface field effe