Semiconductor device having vertical transistor equipped with aligning gate electrode and method of fabricating the same

• Main Authors: YUNIL LEE, SUNGIL PARK, JUNGGUN YOU, DONGHUN LEE, MIRCO CANTORO, CHANGHEE KIM
• Format: Patent
• Language: Chinese; English
• Published: 07.09.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device includes an active pillar on a substrate. A first source/drain region is disposed at a top end of the active pillar and has a greater width than the active pillar. A first insulating layer is disposed on a sidewall of the active pillar and a second insulating layer is disposed on at least a bottom surface of the first source/drain region. A gate electrode is disposed on thefirst insulating layer and the second insulating layer. A second source/drain region is disposed in the substrate at a bottom end of the active pillar. Methods of fabrication are also described. 种半导体器件包括衬底上的有源柱。第源极/漏极区设置在有源柱的顶端处并具有比有源柱更大的宽度。第绝缘层设置在有源柱的侧壁上，第二绝缘层至少设置在第源极/漏极区的底表面上。栅电极设置在第绝缘层和第二绝缘层上。第二源极/漏极区在有源柱的底端处设置在衬底中。还描述了制造方法。