Manufacturing method of epitaxial water and epitaxial wafer

• Main Authors: ASAYAMA EIICHI, MURAKAMI HIROKI, KUBO TAKAYUKI, HORAI MASATAKA
• Format: Patent
• Language: Chinese; English
• Published: 07.09.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a manufacturing method of an epitaxial wafer which can give play to the gettering performance brought about by crystallization defects. The defect density of the epitaxial layersurface of the epitaxial wafer is 102/cm or below. The manufacturing method of the epitaxial wafer is characterized by comprising a single crystal silicon growing procedure, a single crystal silicon cutting procedure and an epitaxial layer forming procedure. In the single crystal silicon growing procedure, single crystal silicon doped with nitrogen with the volume being 10 atoms/cm -4.5*10 atoms/cm grows according to a Czochralski single crystal pulling method; in the single crystal silicon cutting procedure, a silicon wafer is cut from the single crystal silicon; and in the epitaxial layer forming procedure, the silicon wafer is taken as a substrate, a single crystal silicon layer, namely, an epitaxial layer, is formed on the substrate through vapor phase growth. In the epitaxial layer forming procedure, the epi