LOW LEAKAGE RESISTIVE RANDOM ACCESS MEMORY CELLS AND PROCESSES FOR FABRICATING SAME

• Main Authors: HAWLEY FRANK K, MCCOLLUM JOHN L, DHAOUI FETHI
• Format: Patent
• Language: Chinese; English
• Published: 31.08.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A resistive random access memory device is formed in an integrated circuit between a first metal layer and a second metal layer and includes a first barrier layer disposed over the first metal layer,a tunneling dielectric layer disposed over the first barrier layer, a solid electrolyte layer disposed over the tunneling dielectric layer, an ion source layer disposed over the solid electrolyte layer, and a second barrier layer disposed over the ion source layer. 种电阻式随机存取存储器器件在第金属层与第二金属层之间的集成电路中形成并且包括：被布置在第金属层之上的第势垒层，被布置在第势垒层之上的隧穿电介质层，被布置在隧穿电介质层之上的固体电解质层，被布置在固体电解质层之上的离子源层，以及被布置在离子源层之上的第二势垒层。