HDR image sensor pixel structure supporting multiple exposure modes and imaging system

• Main Authors: MA WEIJIAN, MO YAOWU, XIE XIAO, SHAO ZEXU, XU CHEN, REN GUANJING, ZHANG ZHENGMIN, SHI WENJIE, GAO ZHE
• Format: Patent
• Language: Chinese; English
• Published: 17.08.2018
• Subjects: ELECTRIC COMMUNICATION TECHNIQUE; ELECTRICITY; PICTORIAL COMMUNICATION, e.g. TELEVISION

The invention discloses an HDR image sensor pixel structure supporting multiple exposure modes and an imaging system. One end of a reset transistor of the pixel structure is coupled to a first voltagesource and the other end thereof is coupled to a floating diffusion node through a dual conversion gain control unit, a photodiode of the pixel structure is coupled to the floating diffusion node through a rolling exposure transmission unit, and the photodiode is also coupled to the floating diffusion node or coupled to a node between the dual conversion gain control unit and the reset transistorthrough a global exposure transmission unit. Two exposure modes of transmission unit are used to transfer electric charge, so that the pixel structure can support multiple exposure modes; due to useof the dual conversion gain control unit, the pixel structure can support dual conversion gain (DCG), thereby having a characteristic of high dynamic range. 本发明公开了种支持多种曝光模式的HDR图像传感器像素结构及成像系统，该像素结构的复位晶体管的端耦接至第电压源，其另端通过双转换增益控制单元耦