Nano-gap in-situ activated composite anodic bonding method

• Main Authors: PAN MINGQIANG, SUN LINING
• Format: Patent
• Language: Chinese; English
• Published: 10.08.2018
• Subjects: MICROSTRUCTURAL TECHNOLOGY; PERFORMING OPERATIONS; PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS; TRANSPORTING

The invention discloses a nano-gap in-situ activated composite anodic bonding method, including a discharge activation process and an anodic bonding process. The composite anodic bonding method includes the following specific steps: setting a composite anodic bonding parameter; laminating a silicon wafer and a glass sheet to each other and stacking on a fixed workbench, forming a nano-gap at a bonded interface, applying a set bonding pressure at the same time, and heating to the set bonding temperature; and applying a dielectric barrier discharge voltage parameter, a dielectric barrier discharge time parameter, a dielectric barrier discharge frequency parameter, a bonding voltage parameter and a bonding time parameter to obtain a bonding layer. The scheme of the invention firstly uses thenano-gap of an anodic bonding initial interface as a dielectric barrier discharge gap to complete the activation process, and then directly completes the anodic bonding process by switching a power supply, and thus the in-sit