FABRICATION OF NON-PLANAR IGZO DEVICES FOR IMPROVED ELECTROSTATICS

• Main Authors: RIOS RAFAEL, RADOSAVLJEVIC MARKO, KAVALIEROS JACK T, DEWEY GILBERT, FRENCH MARC C, CHU-KUNG BENJAMIN, ARCH RYAN E, MILLARD KENT E, LE VAN H, AGRAWAL ASHISH
• Format: Patent
• Language: Chinese; English
• Published: 03.08.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Embodiments of the invention include non-planar InGaZnO (IGZO) transistors and methods of forming such devices. In an embodiment, the IGZO transistor may include a substrate and source and drain regions formed over the substrate. According to an embodiment, an IGZO layer may be formed above the substrate and may be electrically coupled to the source region and the drain region. Further embodimentsinclude a gate electrode that is separated from the IGZO layer by a gate dielectric. In an embodiment, the gate dielectric contacts more than one surface of the IGZO layer. In one embodiment, the IGZO transistor is a finfet transistor. In another embodiment the IGZO transistor is a nanowire or a nanoribbon transistor. Embodiments of the invention may also include a non-planar IGZO transistor thatis formed in the back end of line stack (BEOL) of an integrated circuit chip. 本发明的实施例包括非平面InGaZnO（IGZO）晶体管和形成此类器件的方法。在实施例中，IGZO晶体管可以包括衬底以及形成在衬底之上的源极和漏极区。根据实施例，IGZO层可以形成在衬底以上并且可以电耦合到源极区和漏极区。另外的实施例包括通过栅极电介质而与IGZO层分离的栅极电极。在实施例中，