High-snow-slide-tolerance deep-groove power device

The invention belongs to the technical field of manufacturing of semiconductor devices and relates to a high-snow-slide-tolerance deep-groove power device. The device comprises a first electric-condition-type silicon substrate and a first electric-condition-type silicon epitaxial layer, grooves are...

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Bibliographic Details
Main Authors ZHOU JINCHENG, ZHU YUANZHENG
Format Patent
LanguageChinese
English
Published 27.07.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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