High-snow-slide-tolerance deep-groove power device
The invention belongs to the technical field of manufacturing of semiconductor devices and relates to a high-snow-slide-tolerance deep-groove power device. The device comprises a first electric-condition-type silicon substrate and a first electric-condition-type silicon epitaxial layer, grooves are...
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Main Authors | , |
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Format | Patent |
Language | Chinese English |
Published |
27.07.2018
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Subjects | |
Online Access | Get full text |
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