High-snow-slide-tolerance deep-groove power device

• Main Authors: ZHOU JINCHENG, ZHU YUANZHENG
• Format: Patent
• Language: Chinese; English
• Published: 27.07.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention belongs to the technical field of manufacturing of semiconductor devices and relates to a high-snow-slide-tolerance deep-groove power device. The device comprises a first electric-condition-type silicon substrate and a first electric-condition-type silicon epitaxial layer, grooves are formed in the first electric-condition-type silicon epitaxial layer, and field oxygen layers, shieldgrids, grid electrodes and grid oxygen layers are arranged in the grooves; second electric-condition-type body areas and first electric-condition-type source areas are arranged between the adjacent grooves, and insulation dielectric layers and source electrode metal are arranged in the grooves and the first electric-condition-type source areas. The device is characterized in that in a platform area between the adjacent grooves, the source electrode metal is in contact with the second electric-condition-type body areas through two through holes, and second electric-condition-type source areasare arranged below all the