Grooved terminal structure
The invention belongs to the technical field of production of semiconductor devices, and relates to a grooved terminal structure. The grooved terminal structure comprises collector metal for leading out a collector and a first-conductive type epitaxial layer positioned above the collector metal, whe...
Saved in:
Main Authors | , |
---|---|
Format | Patent |
Language | Chinese English |
Published |
24.07.2018
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Abstract | The invention belongs to the technical field of production of semiconductor devices, and relates to a grooved terminal structure. The grooved terminal structure comprises collector metal for leading out a collector and a first-conductive type epitaxial layer positioned above the collector metal, wherein a second-conductive type trap region and a plurality of second-conductive type field limiting rings surrounding the second-conductive type trap region are arranged on the surface of the first-conductive type epitaxial layer; the grooved terminal structure is characterized in that a plurality ofmutually parallel grooves are formed in the second-conductive type trap region; floating conductive polysilicon positioned inside a central region and a gate oxide layer enwrapping the conductive polysilicon are arranged inside each groove. The potential at a main junction is increased by adding the groove structure in the trap region, so that the number of the field limiting rings is reduced, and the width of the device |
---|---|
AbstractList | The invention belongs to the technical field of production of semiconductor devices, and relates to a grooved terminal structure. The grooved terminal structure comprises collector metal for leading out a collector and a first-conductive type epitaxial layer positioned above the collector metal, wherein a second-conductive type trap region and a plurality of second-conductive type field limiting rings surrounding the second-conductive type trap region are arranged on the surface of the first-conductive type epitaxial layer; the grooved terminal structure is characterized in that a plurality ofmutually parallel grooves are formed in the second-conductive type trap region; floating conductive polysilicon positioned inside a central region and a gate oxide layer enwrapping the conductive polysilicon are arranged inside each groove. The potential at a main junction is increased by adding the groove structure in the trap region, so that the number of the field limiting rings is reduced, and the width of the device |
Author | ZHOU JINCHENG ZHU YUANZHENG |
Author_xml | – fullname: ZHOU JINCHENG – fullname: ZHU YUANZHENG |
BookMark | eNrjYmDJy89L5WSQci_Kzy9LTVEoSS3KzcxLzFEoLikqTS4pLUrlYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxzn6GBhbGRoaGFuaOxsSoAQA_OCUg |
ContentType | Patent |
DBID | EVB |
DatabaseName | esp@cenet |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Medicine Chemistry Sciences |
DocumentTitleAlternate | 种带沟槽的终端结构 |
ExternalDocumentID | CN108321187A |
GroupedDBID | EVB |
ID | FETCH-epo_espacenet_CN108321187A3 |
IEDL.DBID | EVB |
IngestDate | Fri Jul 19 12:51:52 EDT 2024 |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | false |
Language | Chinese English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-epo_espacenet_CN108321187A3 |
Notes | Application Number: CN201810307605 |
OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180724&DB=EPODOC&CC=CN&NR=108321187A |
ParticipantIDs | epo_espacenet_CN108321187A |
PublicationCentury | 2000 |
PublicationDate | 20180724 |
PublicationDateYYYYMMDD | 2018-07-24 |
PublicationDate_xml | – month: 07 year: 2018 text: 20180724 day: 24 |
PublicationDecade | 2010 |
PublicationYear | 2018 |
RelatedCompanies | WUXI NCE POWER CO., LTD |
RelatedCompanies_xml | – name: WUXI NCE POWER CO., LTD |
Score | 3.2776027 |
Snippet | The invention belongs to the technical field of production of semiconductor devices, and relates to a grooved terminal structure. The grooved terminal... |
SourceID | epo |
SourceType | Open Access Repository |
SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | Grooved terminal structure |
URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180724&DB=EPODOC&locale=&CC=CN&NR=108321187A |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQMTNJNk4BNnV1TSwNLXVNzE2NdJOMLFJ0zZOSLZKA9VlSKviuQ18_M49QE68I0wgmhizYXhjwOaHl4MMRgTkqGZjfS8DldQFiEMsFvLayWD8pEyiUb-8WYuuiBu0dG1oYmBuZqLk42boG-Lv4O6s5O9s6-6n5BQHbuqAreQwtzB2ZGVhBzWjQOfuuYU6gXSkFyFWKmyADWwDQtLwSIQamqgxhBk5n2M1rwgwcvtAJbyATmveKRRik3IGN3LLUFAXo-pUcBcjZr6VFqaIMim6uIc4eukBL4uE-inf2Q7jHWIyBBdjTT5VgUEi2TDO2MDBNAtbylqBKwwLYV0tKM05MTTO1SAS20yQZpHCbI4VPUpqBCxQ6oEFJIxMZBhag-1JlgbVpSZIcOBgAYw93Mw |
link.rule.ids | 230,309,786,891,25594,76903 |
linkProvider | European Patent Office |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQMTNJNk4BNnV1TSwNLXVNzE2NdJOMLFJ0zZOSLZKA9VlSKviuQ18_M49QE68I0wgmhizYXhjwOaHl4MMRgTkqGZjfS8DldQFiEMsFvLayWD8pEyiUb-8WYuuiBu0dG1oYmBuZqLk42boG-Lv4O6s5O9s6-6n5BQHbuqAreQwtzB2ZGVjNgV1CcFcpzAm0K6UAuUpxE2RgCwCallcixMBUlSHMwOkMu3lNmIHDFzrhDWRC816xCIOUO7CRW5aaogBdv5KjADn7tbQoVZRB0c01xNlDF2hJPNxH8c5-CPcYizGwAHv6qRIMCsmWacYWBqZJwFreElRpWAD7aklpxompaaYWicB2miSDFG5zpPBJyjNweoT4-sT7ePp5SzNwgUIKNEBpZCLDwAJ0a6ossGYtSZIDBwkAGkl6HQ |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Grooved+terminal+structure&rft.inventor=ZHOU+JINCHENG&rft.inventor=ZHU+YUANZHENG&rft.date=2018-07-24&rft.externalDBID=A&rft.externalDocID=CN108321187A |