Grooved terminal structure
The invention belongs to the technical field of production of semiconductor devices, and relates to a grooved terminal structure. The grooved terminal structure comprises collector metal for leading out a collector and a first-conductive type epitaxial layer positioned above the collector metal, whe...
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Main Authors | , |
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Format | Patent |
Language | Chinese English |
Published |
24.07.2018
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Subjects | |
Online Access | Get full text |
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Summary: | The invention belongs to the technical field of production of semiconductor devices, and relates to a grooved terminal structure. The grooved terminal structure comprises collector metal for leading out a collector and a first-conductive type epitaxial layer positioned above the collector metal, wherein a second-conductive type trap region and a plurality of second-conductive type field limiting rings surrounding the second-conductive type trap region are arranged on the surface of the first-conductive type epitaxial layer; the grooved terminal structure is characterized in that a plurality ofmutually parallel grooves are formed in the second-conductive type trap region; floating conductive polysilicon positioned inside a central region and a gate oxide layer enwrapping the conductive polysilicon are arranged inside each groove. The potential at a main junction is increased by adding the groove structure in the trap region, so that the number of the field limiting rings is reduced, and the width of the device |
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Bibliography: | Application Number: CN201810307605 |