Grooved terminal structure

• Main Authors: ZHOU JINCHENG, ZHU YUANZHENG
• Format: Patent
• Language: Chinese; English
• Published: 24.07.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention belongs to the technical field of production of semiconductor devices, and relates to a grooved terminal structure. The grooved terminal structure comprises collector metal for leading out a collector and a first-conductive type epitaxial layer positioned above the collector metal, wherein a second-conductive type trap region and a plurality of second-conductive type field limiting rings surrounding the second-conductive type trap region are arranged on the surface of the first-conductive type epitaxial layer; the grooved terminal structure is characterized in that a plurality ofmutually parallel grooves are formed in the second-conductive type trap region; floating conductive polysilicon positioned inside a central region and a gate oxide layer enwrapping the conductive polysilicon are arranged inside each groove. The potential at a main junction is increased by adding the groove structure in the trap region, so that the number of the field limiting rings is reduced, and the width of the device