Device and method for improving film thickness uniformity

• Main Author: ZHONG XIAOLAN
• Format: Patent
• Language: Chinese; English
• Published: 24.07.2018
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The invention discloses a device and a method for improving film thickness uniformity. Wafer placing heating platforms in two technological chambers of a PECVD (Plasma Enhanced Chemical Vapor Deposition) machine are designed as rotary platforms of which the speeds can be controlled by programs; through setting of the rotation speeds of the platforms, the wafers are guaranteed to rotate for an integer number of turns within the technological time, so that influence of radio frequency overlap between the two chambers on the peripheries of the whole wafers is uniform, films around the wafers areuniformly distributed, and sudden change, caused by the radio frequency overlap, of the film thickness is eliminated; by virtue of a characteristic that the radio frequency overlap can increase the film deposition rate, the film thickness difference between the centers and the edges of the films is reduced, so that the film thickness throughout the whole wafers is more uniform. 本发明公开了种提高膜厚均匀性的装置及方法，将PECVD机台双工艺腔体中放置晶圆的加热平台