DEEP-ULTRAVIOLET LED AND METHOD FOR MANUFACTURING SAME

• Main Authors: MATSUURA ERIKO, TASHIRO TAKAHARU, OSADA YAMATO, HIRAYAMA HIDEKI, KASHIMA YUKIO, MORITA TOSHIRO, KOKUBO MITSUNORI, KAMIMURA RYUICHIRO
• Format: Patent
• Language: Chinese; English
• Published: 17.07.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A deep-ultraviolet LED having a design wavelength of lambda and comprising a reflective electrode layer, an extremely thin-film metal layer, and a p-type contact layer which are disposed in that orderfrom an opposite side from a substrate. The deep-ultraviolet LED further comprises a hemispherical lens which is bonded to a backside of the substrate on the p-type contact layer side and which is transparent to the wavelength lambda, and is characterized in that the hemispherical lens has a refractive index which is greater than or equal to an average value of a refractive index of the substrateand a refractive index of air and which is within the refractive index of the substrate, the hemispherical lens having a radius greater than or equal to the radius of the inscribed circle of the substrate and on the order of the radius of the circumscribed circle thereof. 本发明涉及种深紫外LED，其设计波长设为λ，其特征在于，从基板的相反侧起按顺序依次具有反射电极层、极薄膜金属层以及p型接触层，进步，具有与所述p型接触层侧的所述基板的背面接合的、对于波长λ而透明的半球状透镜，所述半球状透镜的折射率为所述基板的折射率和空气的折射率的平均值以上、且处于所述基板的折射率以内，