METROLOGY TARGET, METHOD AND APPARATUS, COMPUTER PROGRAM AND LITHOGRAPHIC SYSTEM
Disclosed is a substrate comprising a combined target for measurement of overlay and focus. The target comprises: a first layer comprising a first periodic structure; and a second layer comprising a second periodic structure overlaying the first periodic structure. The target has structural asymmetr...
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Main Authors | , |
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Format | Patent |
Language | Chinese English |
Published |
17.07.2018
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Subjects | |
Online Access | Get full text |
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Summary: | Disclosed is a substrate comprising a combined target for measurement of overlay and focus. The target comprises: a first layer comprising a first periodic structure; and a second layer comprising a second periodic structure overlaying the first periodic structure. The target has structural asymmetry which comprises a structural asymmetry component resultant from unintentional mismatch between thefirst periodic structure and the second periodic structure, a structural asymmetry component resultant from an intentional positional offset between the first periodic structure and the second periodic structure and a focus dependent structural asymmetry component which is dependent upon a focus setting during exposure of said combined target on said substrate. Also disclosed is a method for forming such a target, and associated lithographic and metrology apparatuses.
公开了种包括用于套刻和焦点的测量的组合目标的衬底。该目标包括:包括第周期性结构的第层;以及包括覆盖第周期性结构的第二周期性结构的第二层。该目标具有结构不对称性,该结构不对称性包括由第周期性结构与第二周期性结构之间的无意失配产生的结构不对称分量、由第周期性结构与第二周期性结构之间的有意位置偏移产生的结构 |
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Bibliography: | Application Number: CN201680069224 |