Conductivity modulated drain extended MOSFET

• Main Authors: DI SARRO, JAMES P, APPASWAMY, ARAVIND C, FARBIZ, FARZAN
• Format: Patent
• Language: Chinese; English
• Published: 06.07.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to a conductivity modulated drain extended MOSFET. An integrated circuit is fabricated on a semiconductor substrate. An insulated gate bipolar transistor (IGBT) (200) is formed upon the semiconductor substrate in which the IGBT has an anode terminal (203), a cathode terminal (205), and a gate terminal (204), and a drift region. A diode (211) is also formed on the semiconductor substrate and has an anode terminal and a cathode terminal, in which the anode of the diode is coupled to the anode terminal (210) of the IGBT and the cathode of the diode is coupled to the drift region of the IGBT through a contact (212). 本发明涉及电导率调制漏极延伸MOSFET。集成电路被制造在半导体衬底上。在所述半导体衬底上形成绝缘栅双极晶体管IGBT(200)，其中所述IGBT具有阳极端子(203)、阴极端子(205)及栅极端子(204)以及漂移区。二极管(211)也形成在所述半导体衬底上，且具有阳极端子及阴极端子，其中所述二极管的所述阳极耦合到所述IGBT的所述阳极端子(210)，且所述二极管的所述阴极通过触点(212)耦合到所述IGBT的所述漂移区。