Chemical mechanical polishing liquid and applications thereof

• Main Authors: WANG CHUNMEI, JING JIANFEN, YANG JUNYA, CAI XINYUAN, DU LINGXI, ZHANG JIAN, SONG KAI, PAN YIJUN, YAO YING
• Format: Patent
• Language: Chinese; English
• Published: 06.07.2018
• Subjects: ADHESIVES; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; DYES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NATURAL RESINS; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; PAINTS; POLISHES; POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH; SEMICONDUCTOR DEVICES; SKI WAXES

The invention provides a chemical mechanical polishing liquid, which contains abrasive particles, a corrosion inhibitor, a complexing agent, an oxidizing agent and at least a sulfonate anionic surfactant. The invention further provides applications of the polishing liquid in polishing of metallic copper. According to the present invention, the polishing selection ratio of the polishing liquid on the copper and tantalum barrier layer is increased; and with the application of the polishing liquid in the polishing of wafers, the Dishing and the Erosion of the polished copper wire can be improved,and copper residue, corrosion and other defects do not exist after the polishing. 本发明方面提供了种化学机械抛光液，其包含研磨颗粒，腐蚀抑制剂，络合剂，氧化剂，至少含有种磺酸盐类阴离子表面活性剂。本发明另方面提供该抛光液在金属铜抛光中的应用。本发明实现了提高抛光液对铜与钽阻挡层的抛光选择比的功效；且本发明用于晶片的抛光可改善抛光后铜线的碟型凹陷(Dishing)和介质层侵蚀(Erosion)，抛光后无铜残留物以及无腐蚀等缺陷。