Semiconductor device, manufacturing method thereof and manufacturing method of memory

• Main Authors: HAN ZONGTING, LI ZHIXIONG, LI JIANYING
• Format: Patent
• Language: Chinese; English
• Published: 01.06.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a semiconductor device, a manufacturing method thereof and a manufacturing method of a memory. The manufacturing method of the semiconductor device includes the following stepsthat: a first channel and a second channel are formed in a substrate and a material layer thereon, the width of the first channel being smaller than the width of the second channel; a covering material layer is formed, and the first channel and the second channel are filled with a fluidic isolating material; part of the fluidic isolating material in the second channel is removed, so that the thickness of the fluidic isolating material on the sidewall of the second channel ranges from 200 angstroms to 1000 angstroms; and a non-fluidic isolating material is formed on the fluidic isolating material. 本发明公开了种半导体元件及其制造方法与存储器的制造方法。半导体元件的制造方法包括：于基底及其上的材料层中形成第与第二沟道，第沟道的宽度小于第二沟道；形成覆盖材料层并填满第与第二沟道的流动性隔离材料；移除第二沟道中的部分流动性隔离材料，使第二沟道侧壁上的流动性隔离材料的厚度介于至之间；于流动性隔离材料上形成非流动性隔离材料。