Etching process method

• Main Authors: GUO XIANG, JING QUAN, LYU YUKUN, ZHANG XUSHENG, REN YU, LUO YONGJIAN
• Format: Patent
• Language: Chinese; English
• Published: 29.05.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses an etching process method which comprises the following steps: step 1, determining the etching rate distribution in the dry etching process cavity, and finding the area position with the lowest dry etching speed; step 2, determining the etching rate distribution in the wet etching process equipment and finding the location of the area with the highest wet etching rate; step3, etching the etched material layer of the wafer product piece as follows: step 31 performing dry etching; step 32 rotating the wafer product piece at a fixed angle to enable the area with the lowest dry etching rate on the wafer product piece is positioned in the area with the highest wet etching rate in the subsequent wet etching process, and step 33, performing wet etching. According to the invention, the uniformity in the etching surface can be improved, the residual of the etched material can be prevented, and the product yield is improved. 本发明公开了种刻蚀工艺方法，包括步骤：步骤、确定干法刻蚀工艺腔中的刻蚀速率分布并找出干法刻蚀速率最低的区域位置。步骤二、确定湿法刻蚀工艺设备中