Integrated photoelectric device and manufacturing method therefor

• Main Authors: HUANG SIMIN, LI LINGYING, LI PENG, ZHANG XIAOFEI, LIN GUANGHUI, ZHONG ZHENGGEN, WANG WENHAO, QIAN BO, XIE YONGLIN, ZHOU YAN, FENG XUE
• Format: Patent
• Language: Chinese; English
• Published: 22.05.2018
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRICITY

The invention provides a manufacturing method for an integrated photoelectric device, and the method comprises the steps: forming a waveguide on a substrate, and forming a conductive metal layer located at one side of the waveguide; forming an insulating layer covering the substrate, the waveguide and the conductive metal layer; forming a groove in the insulating layer, wherein the groove enablesthe conductive metal layer to be exposed; forming a conductive polymeric material layer in the groove so as to form a lower electrode, wherein the conductive polymeric material makes contact with theconductive metal layer; forming a quantum dot microcavity on the insulating layer, wherein the quantum dot microcavity seals the opening of the groove and makes contact with the lower electrode; and forming an upper electrode on the quantum dot microcavity. The invention also provides an integrated photoelectric device manufactured through the manufacturing method. The method achieves the introduction of the colloid quantu