Anode gate MOS thyristor and process method thereof

• Main Authors: HU FEI, SUN BOTAO, SONG LIMEI, HAN ZHENGSHENG
• Format: Patent
• Language: Chinese; English
• Published: 22.05.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The application provides an anode gate MOS thyristor and a process method thereof, relating to the field of semiconductor devices. The anode gate MOS thyristor comprises an anode end, a first gate electrode, an N+ buffer layer and a P-type base region, wherein the anode end comprises a first NMOS structure; the first NMOS structure is formed below the first gate electrode; the N+ buffer layer stores a large amount of electrons when the thyristor is turned on; and the P-type base region stores a large number of holes when the thyristor is turned on, wherein the first gate electrode controls thefirst NMOS structure to extract the electrons in the N+ buffer layer to increase the turn-off speed of the anode gate MOS thyristor. Thereby, the technical problems that an MOS-gated thyristor in theprior art has a slow turn-off speed and the maximum turn-off current of the device is low can be solved, and the technical effects of greatly increasing the turn-off current of the device, improvingthe turn-off speed of the d