Wafer edge defect detecting method

• Main Authors: FENG YALI, CHEN HONGLIN, GU XIAOFANG, NI QILIANG, LONG YIN
• Format: Patent
• Language: Chinese; English
• Published: 04.05.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention belongs to the technical field of semiconductor manufacturing and discloses a wafer edge defect detecting method. The method includes steps: establishing a measurement model which comprises a plurality of measurement points corresponding to the edge of a to-be-detected wafer, wherein each measurement point has a corresponding angle value; measuring a value of distance between each measurement point and the center of the to-be-detected wafer; comparing each distance value with a preset standard numerical value, judging that the measurement points corresponding to the values of distance smaller than the standard numerical value are abnormal points, and acquiring the angle values of the abnormal points; according to the corresponding angle values, acquiring specific defect morphologies of the abnormal points to display. The method has advantages that by defining a plurality of measurement points, in one-to-one correspondence to the angle values, at the edge of the wafer, thevalue of distance betwee