High speed and high precision characterization of VTSAT and VTLIN of FET arrays

The present disclosure relates to high speed and high precision characterization of VTSAT and VTLIN of FET arrays, relates to circuit structures and, more particularly, to circuit structures which detect high speed and high precision characterization of VTsat and VTlin of FET arrays and methods of m...

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Bibliographic Details
Main Authors DIRK FIMMEL, UWE ECKHARDT, JUERGEN BOLDT, MATTHIAS BAER, KARL-HEINZ SANDIG
Format Patent
LanguageChinese
English
Published 01.05.2018
Subjects
CONTROLLING
PHYSICS
REGULATING
SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
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Summary:The present disclosure relates to high speed and high precision characterization of VTSAT and VTLIN of FET arrays, relates to circuit structures and, more particularly, to circuit structures which detect high speed and high precision characterization of VTsat and VTlin of FET arrays and methods of manufacture and use. The circuit includes a control loop comprised of a differential amplifier, a plurality of FET arrays, and at least one analog switch enabling selection between a calibration mode and an operation mode. 本揭示内容涉及FET阵列的VTSAT及VTLIN的高速及高精密度的特征化，其有关于电路结构，且具体而言，有关于侦测FET阵列的VTSAT及VTLIN的高速及高精密度的特征化的电路结构，及其制法和用途。该电路包括由差分放大器、多个FET阵列及至少模拟开关组成的控制回路，该至少模拟开关使得能够在校正模式与操作模式之间选择。
Bibliography:Application Number: CN201710970893