Hollow cathode plasma source

• Main Authors: WIAME HUGHES, BIQUET THOMAS, MASCHWITZ PETER, CHAMBERS JOHN
• Format: Patent
• Language: Chinese; English
• Published: 27.03.2018
• Subjects: ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS

The present invention relates to a hollow cathode plasma source and to methods for surface treating or coating using such a plasma source, comprising first and second electrodes (1, 2), each electrodecomprising an elongated cavity (4), wherein dimensions for at least one of the following parameters is selected so as to ensure high electron density and/or low amount of sputtering of plasma sourcecavity surfaces, those parameters being cavity cross section shape, cavity cross section area cavity distance (11), and outlet nozzle width (12). 本发明涉及空心阴极等离子体源和用于使用这样的等离子体源进行表面处理或涂覆的方法，空心阴极等离子体源包括第和第二电极(1、2)，每个电极包括细长腔(4)，其中选择下面的参数中的至少个的尺度，以便确保高电子密度和/或等离子体源腔表面的低溅射量，那些参数是腔横截面形状、腔横截面面积、腔距离(11)和出口喷嘴宽度(12)。