Semiconductor memory device

• Main Author: KONAGAI SATOSHI
• Format: Patent
• Language: Chinese; English
• Published: 20.03.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

According to one embodiment, a semiconductor memory device includes a substrate, a stacked body, a columnar member, and an insulating film. The stacked body is provided on the substrate, and includesa plurality of electrode layers separately stacked each other. The columnar member is provided in the stacked body, and includes a first semiconductor portion extending in a stacked direction of the plurality of electrode layers. The insulating film covers a bottom portion of the columnar member. 实施方式的半导体存储装置具备衬底、积层体、柱状部、及绝缘膜。所述积层体设置在所述衬底上，具有各自隔开而积层的多层电极层。所述柱状部具有设置在所述积层体内，且沿着所述多层电极层的积层方向延伸的第1半导体部。所述绝缘膜覆盖所述柱状部的底部。